Physical and Predictive Models of Ultra Thin Oxide Reliability in CMOS Devices and Circuits
نویسنده
چکیده
The microelectronics industry owes its considerable success largely to the existence of the thermal oxide of silicon. However, recently there is concern that the reliability of ultra-thin dielectrics will limit further scaling to slightly thinner than 2nm. I will review the physics and statistics of dielectric wearout and breakdown in ultra thin SiO2-based gate dielectrics and discuss the implications of recent long term (>1 year) stress experiments on ultrathin SiO2 and oxynitride films.
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